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Sic Substrate Manufacturer Provide 4 Inch Sic Ingots

Selling Price: USD 100 / Piece
Minimum Order Quantity:  5 Piece
Shipment Delivery Time:  30days
Shipment Port:  shanghai
Currency Options:  USD
Language Support:   English, Chinese
Certification:  Inquire
Production Capacity: High
Primary Business:  Manufacturer
Packaging:  Standard
Preferred Payment Method:
SiC Substrate Manufacturer Provide 4 Inch SiC Ingots Details

SiC Substrate Manufacturer provide 4 inch SiC Ingots

The professional SiC Substrate manufacturer Homray material technology offer both N type and SI type SiC Ingots and SiC wafer with competitive price.

Compared with silicon (Si), silicon carbide (SiC) base material has significant performance advantages, especially in high pressure and high frequency performance.Silicon carbide (SiC) semiconductor is the most mature one among the wide band gap semiconductors developed.  SiC semiconductor materials have a wide band gap, high breakdown electric field, high thermal conductivity, high saturation electron mobility and smaller volume, etc., which has great application potential in high temperature, high frequency, high power, optoelectronics and radiation resistance devices.  

About Homray Material Technology
Business Type: Manufacturer
Country / Region: Jiangsu, China
Main Products: Sic Wafer, Sic Substrate, Gan Substrate, Sic Ingots...
Total Annual Revenue: Not Provided
Year of Establishment: 2009
Certificates: ISO/TS16949
Main Markets: Australia 11%, Canada 13%, Germany 18%, India 25%, United Kingdom 30%,
Business Nature

Manufacturer

No. Employees

11 - 50 People

Year Established

2009

Country/Region

Suzhou, China

Main Products

Sic Wafer, Sic Substrate, Gan Substrate, Sic Ingots...

Legal Status

Third Party

Payment Terms

Bank wire (T/T)

About Homray Material Technology

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of SiC Ingots, Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer and Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

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To: Sic Substrate Manufacturer Provide 4 Inch Sic Ingots
From China
Free Member
Business Type:
Manufacturer
Rating:
Not Available
Response:
88%
Transactions:
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Suli Road , Jiangsu , Suzhou , China

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