RFQ Description
HelloAs we can offer deliveries (technical requirements by request) the monocrystal high-resistance neutron-doped silicon (NTD). The deviation from uniformity of distribution of atoms of an impurity on diameter of an ingot thus does not exceed 3-5 %. Specific electric resistance depending on degree doped which is defined neutrons, makes from 15 to 6000 Ohm/see life Time not the basic carriers of a charge thus to exceed 100 µs. The corresponding commodity product is rather claimed by manufacturers of products high-voltage electrical engineers and electronics on pressure from 1500 V to 4500 V, and at direct currents to 1500 A. For of bipolar transistors (Insulated Gate Bipolar Transistor) with the Isolated Shutter, differ high speed, small time of inclusion – deenergizings, a high admissibility in density of a current, small dimensions, high ???? firmness. A product for the enterprises of manufacturers power the rectifier and basic diodes, bipolar transistors, devices with ???????? communication, stabilitrons, tiristorov, photosensitive devices. Requirements to the silicon, received by a method zonnoi the swimming trunks, neutron-doped (FZ-NTD) Superpure silicon, monocrystal without crucible, an ingot orientation: (111) max, a deviation of 1 degree N-type, NTD;Disorder of specific resistance + 7 %Disorder of resistance on radius 5 %Without a cut;Time of life ??? 300 - 500µcLimiting concentration of oxygen 1*10?16 ??/??3Limiting concentration of carbon 2*10?16 ??/??3Length of an ingot: 100 mmResistance and diameter of ingots varies.Resistance: 30, 45, 50, 60, 70, 90, 100, 130, 150, 180, 200, 220, 250, 300, 350 Ohm/smDiameter: 44; 60; 76,5; 80; 100 mm.Ingots can be grind or not grind on forming (by request). If you it interests, please, contact us. Yours faithfully and the best regards. Anatoly Nikolaevich. - Best Econom *:*-*@********************
